ChargeTransport.jl -- Simulating charge transport in semiconductors
ChargeTransport.jl simulates charge transport in semiconductors. To this end, it discretizes
the semiconductor drift-diffusion equations via the Voronoi finite volume method as implemented in VoronoiFVM.jl.
- 1D, 2D and 3D simulations
- stationary and transient simulations
- IV curves and scan protocols
- an arbitrary amount of charge carriers may be added
- thermodynamically consistent, physics preserving numerical methods
- different charge carrier statistics per species (Boltzmann, Blakemore, Fermi-Dirac)
ChargeTransport.jl is a free software. For research purposes you may use it under the terms of the GNU Affero General Public License (AGPL). As a company you may contact any of the authors directly to obtain a commercial license. If you use this package in your work, please cite it according to CITATION.bib.
The following papers rely on
[1.] D. Abdel, P. Farrell and J. Fuhrmann. Assessing the quality of the excess chemical potential flux scheme for degenerate semiconductor device simulation. Optical and Quantum Electronics 53 (163) (2021).
[2.] D. Abdel, P. Vágner, J. Fuhrmann and P. Farrell. Modelling charge transport in perovskite solar cells: Potential-based and limiting ion depletion. Electrochimica Acta 390 (2021).
[3.] D. Abdel, C. Chainais-Hillairet, P. Farrell and M. Herda. Numerical analysis of a finite volume scheme for charge transport in perovskite solar cells. preprint (2022).
[4.] D. Abdel, N. E. Courtier and P. Farrell. Volume exclusion effects in perovskite charge transport modeling. preprint (2022).
[5.] B. Spetzler, D. Abdel, F. Schwierz, M. Ziegler and P. Farrell. The role of mobile point defects in two-dimensional memristive devices. preprint (2023).