MOSLab.jl

  ] add MOSLab

using MOSLab
using Plots
T = 300.0 # Temperature Kelvin
N_a = 5e18 # Bulk Doping in cm^-3
E_a = 0.044 #  The ground state energy of the acceptor in eV
t_ox = 4e-7 # oxide thickness in cm
t_si = 2.5e-5 # Silicon thickness
Vgv = 1.0 # Gate Voltage
PB = SemiconductorData(T,BoltzmanDist(),PSilicon(N_a,E_a))
MOS = MOSStructure(Alluminium(),SiO2(),PB,t_ox,t_si)
sol = PoissonVoronoi(Vgv,MOS,201)
BandDiagram(sol)
plot!(legend=:topright)
savefig("BandDiagram.png")

PBFermi = SemiconductorData(T,FermiDist(),PSilicon(N_a))
MOSFermi = MOSStructure(Alluminium(),SiO2(),PBFermi,t_ox,t_si)
plot(-2.3:0.05:2.3,x-> ψs(x,MOS),label="Boltzmann Distribution")
plot!(-2.3:0.05:2.3,x-> ψs(x,MOSFermi),label="Fermi Distribution",legend=:topleft)
xlabel!("Vg [V]")
ppsi = ylabel!(L"\psi_s \  [V]")
savefig("psi_comp.png")

  using MOSLab
   using Plots
   using LaTeXStrings
   Vg = 0.1 # Gate Voltage
   Vd = 1.0 # Dain Voltage
   Nx = 101 # Number of grid points on the x direction
   Ny = 101 # Number of grid points on the y direction
   N_d = 6e16 # Dopants density at the drain and source side  in cm ^-3
   T = 300.0 # Temperature in Kelvin
   Nb = 5.7e17 # Dopants ensity at the bulk in cm ^-3
   l = .180e-4 # Channel length
   h = 0.5e-4 # Silicon depth
   t_ox = 4e-7 # Oxide thickens in cm
   Ms = MOSFETInputDeck(N_d,Nb,T,l,h,h/2.0,l,t_ox,:NMOS) # Create the input deck for an NMOS transistor
   Vs = ψs_PSP(Vg,Ms.Gate) # Calculate the surface potential at the gate
   G,psi,nn,pp = MOSFETSimulation(Ms,Vs,Vd,Nx,Ny;verbose=false,ξ₀=0.01) # run 2D MOSFET simulation
   gr()
   X = unique(G[1,:])
   Y = unique(G[2,:])
   contour(X,Y,psi,fill=true)
   surface(G[1,:],G[2,:],psi,fill=true)
   xlabel!(L"x \ [\mu m]")
   ylabel!(L"y \ [\mu m]")
   plot!(zlabel = L"\psi \ [V]")

   yvals = unique(G[2,:])
   ySel = G[2,:] .== yvals[end-1]
   sum(ySel)
   minimum(psi[ySel])
   plot(G[1,ySel],psi[ySel],label="\$ \\psi (x,$(yvals[end-1]) ) \$",legend=:bottomleft)

    savefig("Psi_channel.png")
    plot(G[1,ySel],nn[ySel],label="\$ E_C (x,$(yvals[end-1]) ) \$",legend=:topright)
    savefig("nn_channel.png")

using MOSLab
using Plots
using LaTeXStrings
NpolyDoping = 5.5e17 # Gate Npoly doping concentration in cm^-3
N_a = 5.5e17 # Bulk doping concentration in cm^-3
E_a = 0.0# The ground state energy of the acceptor in eV
t_ox = 3.8e-7 # oxide thickness in cm
t_si = 1e-6
CList2 = reshape( range(colorant"blue", stop=colorant"red",length=7), 1, 7 );

MOSf(T) = MOSStructure(NPoly(NpolyDoping),SiO2(),SemiconductorData(T,BoltzmanDist(),PSilicon(N_a,E_a)),t_ox,t_si) ## Calculate Parameters of a MOS Structure the given parameters using Boltzman Distribution at temperature T 
transistor_model(T) = BSIM6Model(MOSf(T),1.0e-4,1.0e-4)
Idf(Vg,Vd,T) = Id(Vg,Vd,0.0,transistor_model(T)) ## Calculate the Current using the ACM Model of a transistor having the parameters from MOSf(T) and W =1.0 um, L = 1.0 um, similar contructors are available for the other models
plot()
for Vgv in 0.2:0.2:1.8
    plot!(0:0.05:1.8,x->1e6*Idf(Vgv,x,300.0),label="\$V_{GB} = $(Vgv) V\$") # plot Id, Vd characteristics for different VGB
end
PSPG = plot!(xlabel=L"V_{DS} \ [V]",ylabel=L"I_{DS} \ [\mu A]",legend=:topleft)

plot()
for (i,Tv) in enumerate(LinRange(200,500,5))
    plot!(0:0.05:1.0,x->1e6*Idf(x,0.1,Tv),label="\$T = $(Tv) K\$",linecolor=CList2[i]) # plot Id, Vg characteristics for different Temperatures
end
PSPD = plot!(xlabel=L"V_{GS} \ [V]",ylabel=L"I_{DS} \ [\mu A]",legend=:topleft,yaxis=:log10)
plot(PSPG,PSPD) # plot both graphs side by side 
savefig("TransistorCurves.png")

gmIdf(Vg,Vd,T) = gm(Vg,Vd,0.0,transistor_model(T))/Idf(Vg,Vd,T)
plot()
for (i,Tv) in enumerate(LinRange(200,500,5))
    plot!(0:0.01:1.0,x->gmIdf(x,0.1,Tv),label="\$T = $(Tv) K\$",linecolor=CList2[i]) # plot Id, Vg characteristics for different Temperatures
end
PSPD = plot!(xlabel=L"V_{GS} \ [V]",ylabel=L"I_{DS} \ [\mu A]",legend=:topright)
savefig("gmId.png")

using Plots
using MOSLab


NpolyDoping = 5e17 # Gate Npoly doping concentration in cm^-3
N_a = 5e17 # Bulk doping concentration in cm^-3
E_a = 0.044 # The ground state energy of the acceptor in eV
t_ox = 4e-7 # oxide thickness in cm
t_si = 1e-6
MOSf(T) = MOSStructure(NPoly(NpolyDoping),SiO2(),SemiconductorData(T,BoltzmanDist(),PSilicon(N_a,E_a)),t_ox,t_si) ## Calculate Parameters of a MOS Structure the given parameters using Boltzman Distribution at temperature T 
g = 1
d = 2
s = 0
M1 = CircuitComponent("M1",ACMModel(MOSf(300.0),1000.0e-4,1.0e-4))
netT = Netlist()
addComponent(netT,M1,Dict("g"=>1,"d"=>d,"s"=>s))
addComponent(netT,CircuitComponent("Vg",VoltageSource(0.3)),Dict("p"=>g,"n"=>s))
addComponent(netT,CircuitComponent("Vd",VoltageSource(1.0)),Dict("p"=>d,"n"=>s))
ckt = Circuit(netT)
res = dc_op(ckt)
for i in 2:length(netT.nodes) # exclude ground
    println("$(netT.nodes[i].name): $(res[i-1])")
end

V_n1: 0.3
V_n2: 1.0
J_Vg: 0.0
J_Vd: -0.0005823007996463166